Lucintel's latest market report analyzed that gallium nitride semiconductor device provides attractive opportunities in the automotive, consumer electronics, aerospace & defence, healthcare, industrial & power, and others. The gallium nitride semiconductor device market is expected to grow at a CAGR of 18%-20%. In this market, power devices are the largest segment by application.
Download Brochure of this report by clicking on https://www.lucintel.com/gallium-nitride-semiconductor-device-market.aspx Based on application, the gallium nitride semiconductor device market is segmented into power drives, supply and inverter, RF, lighting and laser. The power devices segment accounted for the largest share of the market in 2020 and is expected to register the highest CAGR during the forecast period, due to its ability to minimize power loss and achieve high-speed switching with characteristics such as miniaturization, high breakdown voltage, and high-speed switching.
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The Gallium Nitride Semiconductor Device Market is marked by the presence of several big and small players. Some of the prominent players offering gallium nitride semiconductor device include NXP Semiconductor N.V., GaN Systems, Inc., Efficient Power Conversion Corporation, Inc., Toshiba Corporation, Qorvo, Inc., Cree, Inc., Fujitsu Ltd., and Texas Instruments, Inc.
This unique research report will enable you to make confident business decisions in this globally competitive marketplace. For a detailed table of contents, contact Lucintel at +1-972-636-5056 or click on this link email@example.com.
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